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| PJD882/PJD882S NPN Epitaxial Silicon Transistor AUDIO FREQ UENCY POWER AMPLIFIER LOW SPEED SWITCHING * * * Complement to PJB772 PW10ms,Duty Cycle50%Pulse Test PW350 s, Duty Cycle 2% TO-92 TO-126 ABSOLUTE MAXIMUM RATINGS (T a = 25 ) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Bias Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25) Collector Dissipation (Ta=25) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC IB PC PC Tj Tstg Rating 40 30 5 3 7 0.6 10 1 150 -55~150 Unit V V V A A A W W Pin : 1.Emitter 2.Collector 3.Base ORDERING INFORMATION Device PJD882CT PJD882CK Operating Temperature -20+85 Package TO-92 TO-126 ELECTRICAL CHARACTERISTICS(T a=25) Characteristics Collector Cutoff Current Emitter Cutoff Current *DC Current Gain *Collector Emitter Saturation Voltage *Base Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 VCE(SAT) VBE(SAT) fT Cob Test condition VCB=30V,IE =0 VEB=3V,IC=0 VCE =2V,IC=20mA VCE =2V,IC=1A IC=2A,IB=0.2A IC=2A,IB=0.2A VCE =5V,IC=0.1A VCB=10V,IE =0 f=1MHz Min Typ Min 1 1 Unit A A 30 60 150 160 0.3 1.0 90 45 400 0.5 2.0 V V MHz pF h FE(2) CLASSIFICATION Classification hFE (2) R 60-120 O 100-200 Y 160-320 G 200-400 1-3 2002/01.rev.A PJD882/PJD882S NPN Epitaxial Silicon Transistor . STATIC CHARACTERISTIC CURRENT GAIN-BANDWIDTH PRODUCT BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE SAFE OPERATING AREAS COLLECTOR OUTPUT CAPACITANCE DERATING CURVE OF SAFE OPERATING AREAS DC CURRENT GAIN POWER DERATING 2-3 2002/01.rev.A PJD882/PJD882S NPN Epitaxial Silicon Transistor 3-3 2002/01.rev.A |
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